Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures
نویسندگان
چکیده
We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current–voltage (I–V) characterization was done in the 6–300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 × 4 μm2 at temperatures below 130 K. This suggests that the resonant tunneling is the dominant charge transport mechanism in our devices. (Some figures may appear in colour only in the online journal)
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